| PART |
Description |
Maker |
| CM150TJ-12F |
Trench Gate Design Six IGBTMOD?/a> 150 Amperes/600 Volts
Trench Gate Design Six IGBTMOD⑩ 150 Amperes/600 Volts
Trench Gate Design Six IGBTMOD 150 Amperes/600 Volts
128 x 64 pixel format, LED or EL Backlight available
|
POWEREX[Powerex Power Semiconductors]
|
| P6KE39A P6KE9.1CA P6KE51CA P6KE300A P6KE300CA P6KE |
16-Bit Bus Transceivers and Registers with 3-State Outputs 56-SSOP -40 to 85 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-15
RF Down-Converter 20-QFN 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-15
Low Power 5V RS232 Dual Driver/Receiver with 0.1?μF Capacitors; Package: SO; No of Pins: 16; Temperature Range: -40?°C to 85?°C 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15
Presettable Synchronous 4-Bit Up/Down Binary Counters 16-SOIC -40 to 85 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15
2.5-V 460-Kbps RS-232 Transceiver With /-15-kV ESD Protection 20-TSSOP 0 to 70
600 Watt Transient Voltage Suppressors
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Microsemi
|
| 150K60A 150KS30 150KR30A 150KS30PBF |
150 A, 600 V, SILICON, RECTIFIER DIODE, DO-205AA
DIODE 150 A, 300 V, SILICON, RECTIFIER DIODE, B-42, 1 PIN, Rectifier Diode
150 A, 300 V, SILICON, RECTIFIER DIODE, DO-205AA
|
Vishay Semiconductors
|
| PPHR70L60A |
Insulated Gate Bipolar Transistor; Package: TO-254; VCE(sat) (V): 1.6; t(on) (nsec): 115; IC (A): 70; PD (W): 300; E(off) (mJ): 15; Rq: 0.4; Qg(on) (nC): 150; t(off) (nsec): 1700; BV(CES) (V): 600; VGE(th) (V): 3 70 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
| STF23NM60N STI23NM60N STW23NM60N STP23NM60N STB23N |
N-channel 600 V - 0.150 ヘ - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh⑩ Power MOSFET
N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh?/a> Power MOSFET
N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh Power MOSFET
N-channel 600 V - 0.150 楼? - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh垄芒 Power MOSFET
|
http://
STMicroelectronics
|
| TT430N DT95N TD251N |
800 A, 1800 V, SCR
150 A, 600 V, SCR
410 A, 600 V, SCR
|
Infineon Technologies AG
|
| PM150RLB060 |
Intellimod L-Series Three Phase IGBT Inverter Brake 150 Amperes/600 Volts
Intellimod⑩ L-Series Three Phase IGBT Inverter Brake 150 Amperes/600 Volts
|
Powerex Power Semiconductors
|
| 2N5401A |
600 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
MICRO COMMERCIAL COMPONENTS
|
| R6031.522PSYA R6221.530PSYA R6220.530PSYA R9GS2010 |
220 A, 150 V, SILICON, RECTIFIER DIODE R60, 1 PIN
300 A, 150 V, SILICON, RECTIFIER DIODE R62, 2 PIN
300 A, 50 V, SILICON, RECTIFIER DIODE R62, 2 PIN
1000 A, 2000 V, SILICON, RECTIFIER DIODE R9G, 2 PIN
350 A, 2200 V, SILICON, RECTIFIER DIODE
100 A, 200 V, SILICON, RECTIFIER DIODE
200 A, 1500 V, SILICON, RECTIFIER DIODE
1500 A, 1200 V, SILICON, RECTIFIER DIODE
125 A, 800 V, SILICON, RECTIFIER DIODE
150 A, 1200 V, SILICON, RECTIFIER DIODE
400 A, 200 V, SILICON, RECTIFIER DIODE
800 A, 3200 V, SILICON, RECTIFIER DIODE
350 A, 700 V, SILICON, RECTIFIER DIODE
400 A, 900 V, SILICON, RECTIFIER DIODE
100 A, 1500 V, SILICON, RECTIFIER DIODE
1000 A, 1500 V, SILICON, RECTIFIER DIODE
1000 A, 1700 V, SILICON, RECTIFIER DIODE
800 A, 3100 V, SILICON, RECTIFIER DIODE
250 A, 50 V, SILICON, RECTIFIER DIODE
800 A, 3600 V, SILICON, RECTIFIER DIODE
330 A, 500 V, SILICON, RECTIFIER DIODE
|
Powerex, Inc.
POWEREX INC
|
| PM150CL1A060 |
Three Phase IGBT Inverter 150 Amperes/600 Volts
|
Powerex Power Semiconductors
|
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